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APTGF90DH60T3G

Microsemi Corporation
RoHS
/
Package SP3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 600V 110A 416W SP3
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Technical Details

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 3
Transistor Element Material SILICON

Technical

Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 11
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 416W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 25
JESD-30 Code R-XUFM-X11
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 2
Configuration Asymmetrical Bridge
Element Configuration Dual
Case Connection ISOLATED
Power - Max 416W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 110A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 4.3nF
Turn On Time 36 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 100A
Turn Off Time-Nom (toff) 180 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 4.3nF @ 25V

Compliance

RoHS Status RoHS Compliant

Alternative Model

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