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MIO1200-33E11

IXYS
RoHS
/
Package E11
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 3300V 1200A E11
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Technical Details

Supply Chain

Factory Lead Time 25 Weeks

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E11
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~125°C TJ
Published 2004
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 9
Terminal Position UPPER
Terminal Form UNSPECIFIED
Base Part Number MIO
Pin Count 9
JESD-30 Code R-XUFM-X9
Number of Elements 3
Configuration Single Switch
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 3.1V
Max Collector Current 1.2kA
Current - Collector Cutoff (Max) 120mA
Collector Emitter Breakdown Voltage 3.3kV
Voltage - Collector Emitter Breakdown (Max) 3300V
Current - Collector (Ic) (Max) 1200A
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 1200A
IGBT Type NPT
NTC Thermistor No

Compliance

RoHS Status RoHS Compliant

Alternative Model

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