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APTCV90TL12T3G

Microsemi Corporation
RoHS
/
Package SP3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description POWER MODULE IGBT QUAD 900V SP3
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Technical Details

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 3
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Operating Temperature -40°C~175°C TJ
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 32
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 280W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 32
Number of Elements 4
Configuration Three Level Inverter - IGBT, FET
Case Connection ISOLATED
Power - Max 280W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 80A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 2.77nF
Turn On Time 80 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A
Turn Off Time-Nom (toff) 370 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 2.77nF @ 25V

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