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MG200Q2YS60A

Powerex Inc.
RoHS
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Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MOD CMPCT DUAL 1200V 200A
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Technical Details

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Module
Transistor Element Material SILICON

Technical

Operating Temperature -20°C~150°C TJ
Published 2002
Series IGBTMOD?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 11
Max Power Dissipation 2kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 11
JESD-30 Code R-XUFM-X11
Number of Elements 2
Configuration Half Bridge
Case Connection ISOLATED
Power - Max 2000W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.8V
Max Collector Current 200A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 15nF
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 200A
NTC Thermistor No
Input Capacitance (Cies) @ Vce 15nF @ 10V

Compliance

RoHS Status RoHS Compliant
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