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CP30TD1-12A

Powerex Inc.
RoHS
/
Package 26-DIP Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 600V 30A 114W
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Inventory: 3593
Minimum: 1
Total Price: USD $63.87
Unit Price: USD $63.869925
≥1 USD $63.869925
≥10 USD $52.406655
≥100 USD $50.76876
≥500 USD $49.130865
≥1000 USD $47.49297

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case 26-DIP Module
Transistor Element Material SILICON

Technical

Operating Temperature -20°C~150°C TJ
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 26
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 114W
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 26
JESD-30 Code R-XDIP-T26
Qualification Status Not Qualified
Number of Elements 7
Configuration Three Phase Inverter with Brake
Case Connection ISOLATED
Power - Max 114W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Three Phase Bridge Rectifier
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 30A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 2.36nF
Turn On Time 130 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 30A
Turn Off Time-Nom (toff) 600 ns
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 2.36nF @ 10V

Compliance

RoHS Status RoHS Compliant
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