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APTGF100A1202G

Microsemi Corporation
RoHS
/
Package SP2
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description POWER MOD IGBT NPT PHASE LEG SP2
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Technical Details

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP2
Number of Pins 18

Compliance

RoHS Status RoHS Compliant

Technical

Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 568W
Number of Elements 1
Configuration Half Bridge
Element Configuration Dual
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 135A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 6.5nF
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 100A
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 6.5nF @ 25V
VCEsat-Max 3.7 V

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