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APTGF90H60T3G

Microsemi Corporation
RoHS
/
Package SP3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 600V 120A 416W SP3
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Technical Details

Supply Chain

Factory Lead Time 20 Weeks

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 20

Technical

Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 15
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 416W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 25
JESD-30 Code R-XUFM-X15
Qualification Status Not Qualified
Number of Elements 4
Configuration Full Bridge Inverter
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 120A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V
Input Capacitance 4.4nF
Turn On Time 52 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 100A
Turn Off Time-Nom (toff) 152 ns
IGBT Type NPT
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 4.4nF @ 25V
VCEsat-Max 2.45 V

Dimensions

Height 11.5mm
Length 73.4mm
Width 40.8mm

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free
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