VS-GA200SA60SP

Vishay Semiconductor Diodes Division

RoHS

RoHS compliant

Package SOT-227-4, miniBLOC

Category Discrete Semiconductor Products / Transistors - IGBTs - Modules

Description VISHAY VS-GA200SA60SP IGBT Single Transistor, 200 A, 1.1 V, 630 W, 600 V, ISOTOP, 4

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Technical Details

Physical

Mount Chassis Mount, Screw

Mounting Type Chassis Mount

Package / Case SOT-227-4, miniBLOC

Number of Pins 4

Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ

Published 2000

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 4

ECCN Code EAR99

Additional Feature UL APPROVED

Max Power Dissipation 630W

Terminal Position UPPER

Terminal Form UNSPECIFIED

Number of Elements 1

Configuration Single

Power Dissipation 630W

Case Connection ISOLATED

Power - Max 781W

Transistor Application POWER CONTROL

Rise Time 60ns

Polarity/Channel Type N-CHANNEL

Input Standard

Collector Emitter Voltage (VCEO) 600V

Max Collector Current 342A

Current - Collector Cutoff (Max) 1mA

Collector Emitter Breakdown Voltage 600V

Collector Emitter Saturation Voltage 1.1V

Input Capacitance 16.25nF

Turn On Time 132 ns

Vce(on) (Max) @ Vge, Ic 1.3V @ 15V, 100A

Turn Off Time-Nom (toff) 2160 ns

NTC Thermistor No

Input Capacitance (Cies) @ Vce 16.25nF @ 30V

Compliance

REACH SVHC Unknown

RoHS Status ROHS3 Compliant

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