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VS-GA200TH60S

Vishay Semiconductor Diodes Division
RoHS
RoHS RoHS compliant
Package Double INT-A-PAK (3 + 4)
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT 600V 260A 1042W INT-A-PAK
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Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Double INT-A-PAK (3 + 4)

Technical

Operating Temperature -40°C~150°C TJ
Published 2015
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Nickel (Ni)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.042kW
Number of Elements 1
Configuration Half Bridge
Power - Max 1042W
Input Standard
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 260A
Current - Collector Cutoff (Max) 5μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 13.1nF
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 200A (Typ)
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 13.1nF @ 25V

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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