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VS-GB150TH120N

Vishay Semiconductor Diodes Division
RoHS
RoHS RoHS compliant
Package Double INT-A-PAK (3 + 4)
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT 1200V 300A 1008W INT-A-PAK
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Technical Details

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Double INT-A-PAK (3 + 4)

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature 150°C TJ
Published 2015
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Nickel (Ni)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.008kW
Number of Elements 1
Configuration Half Bridge
Power - Max 1008W
Input Standard
Collector Emitter Voltage (VCEO) 2.35V
Max Collector Current 300A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 11nF
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 150A
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 11nF @ 25V

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