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VS-GB100NH120N

Vishay Semiconductor Diodes Division
RoHS
RoHS RoHS compliant
Package Double INT-A-PAK (3 + 4)
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT 1200V 200A 833W INT-A-PAK
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Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature 150°C TJ
Published 2015
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Nickel (Ni)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 833W
Number of Elements 1
Configuration Single
Power - Max 833W
Input Standard
Collector Emitter Voltage (VCEO) 2.35V
Max Collector Current 200A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 8.58nF
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 100A
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 8.58nF @ 25V

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