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VS-GB300TH120N

Vishay Semiconductor Diodes Division
RoHS
RoHS RoHS compliant
Package Double INT-A-PAK (3 + 4)
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description Trans IGBT Module N-CH 1.2KV 500A
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Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case Double INT-A-PAK (3 + 4)
Number of Pins 7

Technical

Operating Temperature 150°C TJ
Published 2015
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Nickel (Ni)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.645kW
Number of Elements 1
Configuration Half Bridge
Element Configuration Dual
Power - Max 1645W
Input Standard
Collector Emitter Voltage (VCEO) 2.45V
Max Collector Current 500A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 21.2nF
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 300A
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 21.2nF @ 25V

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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