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VS-GT400TH120N

Vishay Semiconductor Diodes Division
RoHS
RoHS RoHS compliant
Package Double INT-A-PAK (3 + 8)
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description Trans IGBT Module N-CH 1.2KV 600A
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Technical Details

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Double INT-A-PAK (3 + 8)

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature 150°C TJ
Published 2015
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish NICKEL (197)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 2.119kW
Number of Elements 1
Configuration Half Bridge
Power - Max 2119W
Input Standard
Collector Emitter Voltage (VCEO) 2.15V
Max Collector Current 600A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 28.8nF
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 400A
IGBT Type Trench
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 28.8nF @ 25V

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