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VS-GB50TP120N

Vishay Semiconductor Diodes Division
RoHS
RoHS RoHS compliant
Package INT-A-PAK (3 + 4)
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT 1200V 100A 446W INT-A-PAK
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case INT-A-PAK (3 + 4)
Supplier Device Package INT-A-PAK

Technical

Operating Temperature 150°C TJ
Published 2015
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 446W
Configuration Half Bridge
Power - Max 446W
Input Standard
Collector Emitter Voltage (VCEO) 2.15V
Max Collector Current 100A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 100A
Input Capacitance 4.29nF
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 50A
NTC Thermistor No
Input Capacitance (Cies) @ Vce 4.29nF @ 25V

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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