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BSM150GB170DN2HOSA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MOD 1700V 220A 1250W
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Inventory: 4714
Minimum: 1
Total Price: USD $162.28
Unit Price: USD $162.283482
≥1 USD $162.283482
≥10 USD $156.947281
≥25 USD $155.856286
≥50 USD $154.772874
≥100 USD $151.589493
≥500 USD $140.75162

Technical Details

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Module
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature 150°C TJ
Published 1999
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
Max Power Dissipation 1.25kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
JESD-30 Code R-XUFM-X7
Number of Elements 2
Configuration Half Bridge
Case Connection ISOLATED
Power - Max 1250W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 3.9V
Max Collector Current 220A
Current - Collector Cutoff (Max) 1.5mA
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Input Capacitance 20nF
Turn On Time 720 ns
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 150A
Turn Off Time-Nom (toff) 1310 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 20nF @ 25V

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