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FZ1200R33KL2CNOSA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 3300V IHV 190MM
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~125°C TJ
Published 2013
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 9
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 9
JESD-30 Code R-XUFM-X9
Number of Elements 3
Configuration COMPLEX
Case Connection ISOLATED
Power - Max 14500W
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 3300V
Current - Collector (Ic) (Max) 2300A
Power Dissipation-Max (Abs) 14500W
Turn On Time 1700 ns
Vce(on) (Max) @ Vge, Ic 3.65V @ 15V, 1200A
Turn Off Time-Nom (toff) 4250 ns
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 145nF @ 25V
VCEsat-Max 3.65 V

Compliance

RoHS Status Non-RoHS Compliant

Alternative Model

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