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BSM100GB170DN2HOSA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MOD 1700V 145A 1000W
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Technical Details

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module

Technical

Operating Temperature 150°C TJ
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 1kW
Configuration Half Bridge
Power - Max 1000W
Input Standard
Collector Emitter Voltage (VCEO) 3.9V
Max Collector Current 145A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 145A
Input Capacitance 16nF
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 100A
NTC Thermistor No
Input Capacitance (Cies) @ Vce 16nF @ 25V

Compliance

RoHS Status RoHS Compliant

Alternative Model

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