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FZ800R33KL2CB5NOSA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 3300V IHV 130MM
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Technical Details

Physical

Mount Surface Mount
Mounting Type Chassis Mount
Package / Case Module
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~125°C TJ
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
Max Power Dissipation 9.8kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-XUFM-X7
Number of Elements 2
Configuration COMPLEX
Case Connection ISOLATED
Power - Max 9800W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 3.65V
Max Collector Current 1.5kA
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 3.3kV
Voltage - Collector Emitter Breakdown (Max) 3300V
Current - Collector (Ic) (Max) 1500A
Input Capacitance 97nF
Turn On Time 1400 ns
Vce(on) (Max) @ Vge, Ic 3.65V @ 15V, 800A
Turn Off Time-Nom (toff) 4250 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 97nF @ 25V

Compliance

RoHS Status Non-RoHS Compliant

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