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BSM50GD170DLBOSA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT 2 LOW POWER ECONO3-1
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Technical Details

Physical

Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~125°C
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 21
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Reach Compliance Code compliant
Pin Count 21
JESD-30 Code R-XUFM-X21
Number of Elements 6
Configuration Full Bridge
Case Connection ISOLATED
Power - Max 480W
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 100μA
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 100A
Turn On Time 200 ns
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 50A
Turn Off Time-Nom (toff) 930 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 3.5nF @ 25V

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