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FS75R12KE3_B3

Infineon Technologies
RoHS
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Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description Trans IGBT Module N-CH 1.2KV 100A 36-Pin ECONO 3
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Technical Details

Physical

Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 36
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 34
ECCN Code EAR99
Terminal Finish TIN LEAD
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 34
JESD-30 Code R-XUFM-X34
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 355W
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 100A
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Power Dissipation-Max (Abs) 355W
Turn On Time 340 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 75A
Turn Off Time-Nom (toff) 610 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 5.3nF @ 25V
VCEsat-Max 2.15 V

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

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