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FZ1000R33HE3BOSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 3300V 1000A 1600W
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Technical Details

Physical

Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C
Pbfree Code no
Part Status Active
Number of Terminations 7
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal Form UNSPECIFIED
Reach Compliance Code compliant
Pin Count 7
JESD-30 Code R-XUFM-X7
Number of Elements 2
Configuration Single Switch
Case Connection ISOLATED
Power - Max 1600W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 3300V
Current - Collector (Ic) (Max) 1000A
Power Dissipation-Max (Abs) 9600W
Turn On Time 1150 ns
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 100A
Turn Off Time-Nom (toff) 3550 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 190nF @ 25V
VCEsat-Max 3.1 V

Compliance

RoHS Status RoHS Compliant
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