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Transistors - IGBTs - Modules
BSM30GP60B2BOSA1

BSM30GP60B2BOSA1

Infineon Technologies

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Package Module

Category Discrete Semiconductor Products / Transistors - IGBTs - Modules

Description IGBT MODULE 600V 50A 180W

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Technical Details

Physical

Mounting Type Chassis Mount

Package / Case Module

Technical

Operating Temperature -40°C~125°C

Part Status Last Time Buy

Configuration Full Bridge

Power - Max 180W

Input Three Phase Bridge Rectifier

Current - Collector Cutoff (Max) 500μA

Voltage - Collector Emitter Breakdown (Max) 600V

Current - Collector (Ic) (Max) 50A

Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 30A

NTC Thermistor Yes

Input Capacitance (Cies) @ Vce 1.6nF @ 25V

Alternative Model

RN4982FE(T5L,F,T)

IRFR1N60ATRLPBF

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Diodes Incorporated

Vishay Semiconductor Diodes Division

Microsemi Corporation

Micro Commercial Co

Vishay Semiconductor Diodes Division

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