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BC53PA,115

Nexperia USA Inc.
RoHS
RoHS RoHS compliant
Package 3-PowerUDFN
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description 80 V, 1 A PNP medium power transistor
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Inventory: 545
Minimum: 1
Total Price: USD $0.35
Unit Price: USD $0.35112
≥1 USD $0.35112
≥10 USD $0.247632
≥100 USD $0.12474
≥500 USD $0.110566
≥1000 USD $0.086043

Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-PowerUDFN
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Max Power Dissipation 420mW
Terminal Position DUAL
Terminal Form NO LEAD
Frequency 145MHz
Pin Count 3
Number of Elements 1
Configuration SINGLE
Power Dissipation 1.65W
Case Connection COLLECTOR
Power - Max 420mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 145MHz
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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