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MT3S111TU,LF

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package 3-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description RF SIGE NPN BIPOLAR TRANSISTOR N
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Inventory: 14732
Minimum: 1
Total Price: USD $0.55
Unit Price: USD $0.54516
≥1 USD $0.54516
≥10 USD $0.48048
≥100 USD $0.43391
≥500 USD $0.379579
≥1000 USD $0.333083
≥3000 USD $0.29435

Technical Details

Physical

Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 800mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA 5V
Gain 12.5dB
Voltage - Collector Emitter Breakdown (Max) 6V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 10GHz
Noise Figure (dB Typ @ f) 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz

Alternative Model

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