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2SC2714-Y(TE85L,F)

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description Bipolar Transistors - BJT Radio-Freq Bipolar NPN 20mA 100mW 30V
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Inventory: 8101
Minimum: 1
Total Price: USD $0.01
Unit Price: USD $0.014522
≥1 USD $0.014522
≥10 USD $0.014095
≥100 USD $0.013668
≥500 USD $0.013134

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON

Technical

Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 100mW
Terminal Position DUAL
Terminal Form GULL WING
JESD-30 Code R-PDSO-G3
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 550MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 20mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 6V
Collector Emitter Breakdown Voltage 30V
Gain 23dB
Transition Frequency 550MHz
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 4V
hFE Min 40
Continuous Collector Current 20mA
Highest Frequency Band VERY HIGH FREQUENCY B
Noise Figure (dB Typ @ f) 2.5dB @ 100MHz

Compliance

RoHS Status RoHS Compliant

Alternative Model

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