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MT3S20TU(TE85L)

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package 3-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description RF Bipolar Transistors Radio-Freq VHF/UHF 80mA 900mW 12V
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Inventory: 11751
Minimum: 1
Total Price: USD $5.88
Unit Price: USD $5.875275
≥1 USD $5.875275
≥10 USD $4.820918
≥100 USD $4.670295
≥500 USD $4.519673
≥1000 USD $4.36905

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead

Technical

Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 900mW
Reach Compliance Code unknown
Element Configuration Single
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA 5V
Collector Emitter Breakdown Voltage 12V
Gain 12dB
Transition Frequency 5000MHz
Max Breakdown Voltage 12V
Frequency - Transition 7GHz
Emitter Base Voltage (VEBO) 1.5V
Continuous Collector Current 80mA
Noise Figure (dB Typ @ f) 1.45dB @ 20mA, 5V

Compliance

RoHS Status RoHS Compliant

Alternative Model

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