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Package M214
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description Trans GP BJT NPN 5.4A 4-Pin Case M214
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Technical Details

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case M214
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature 200°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Power Dissipation 175W
Terminal Position DUAL
Terminal Form FLAT
Pin Count 2
JESD-30 Code R-CDFM-F2
Number of Elements 1
Configuration SINGLE
Case Connection BASE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Max Collector Current 5.4A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 1A 5V
Collector Emitter Breakdown Voltage 65V
Gain 9dB
Max Frequency 1.09GHz
Frequency - Transition 1.03GHz~1.09GHz
Collector Base Voltage (VCBO) 65V
Highest Frequency Band L B

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
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