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Transistors - Bipolar (BJT) - RF
2SC4228-A

2SC4228-A

RoHS

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Package SC-70, SOT-323

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF

Description RF TRANS NPN 10V 8GHZ SC70-3

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Technical Details

Technical

Operating Temperature 150°C TJ

Packaging Strip

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Max Power Dissipation 150mW

Power - Max 150mW

Transistor Type NPN

Max Collector Current 35mA

DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5mA 3V

Collector Emitter Breakdown Voltage 10V

Gain 7.5dB

Voltage - Collector Emitter Breakdown (Max) 10V

Current - Collector (Ic) (Max) 35mA

Frequency - Transition 8GHz

Noise Figure (dB Typ @ f) 1.9dB @ 2GHz

Compliance

RoHS Status RoHS Compliant

Alternative Model

SI2302CDS-T1-GE3

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VS-30ETH06-1-M3

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Diodes Incorporated

Taiwan Semiconductor Corporation

Microsemi Corporation

Microsemi Corporation

Microsemi Corporation

ON Semiconductor

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