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2N2857UB

Microsemi Corporation
RoHS
/
Package 3-SMD, No Lead
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description Trans GP BJT NPN 15V 0.04A 3-Pin UB
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Technical Details

Supply Chain

Factory Lead Time 22 Weeks

Compliance

Radiation Hardening No
RoHS Status Non-RoHS Compliant

Technical

Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Subcategory Other Transistors
Max Power Dissipation 200mW
Terminal Position DUAL
Pin Count 3
Number of Elements 1
Configuration SINGLE
Power Dissipation 200mW
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 40mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 3mA 1V
Gain 21dB
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 3V
Highest Frequency Band ULTRA HIGH FREQUENCY B
Noise Figure (dB Typ @ f) 4.5dB @ 450MHz

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