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Transistors - Bipolar (BJT) - RF
2SC3356-T1B-R24-A

2SC3356-T1B-R24-A

RoHS

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Package TO-236-3, SC-59, SOT-23-3

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF

Description SAME AS NE85633 NPN SILICON AMPL

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Inventory: 8024

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Technical Details

Physical

Mount Surface Mount

Mounting Type Surface Mount

Package / Case TO-236-3, SC-59, SOT-23-3

Technical

Operating Temperature 150°C TJ

Packaging Tape & Reel (TR)

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Max Power Dissipation 200mW

Transistor Type NPN

Max Collector Current 100mA

DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA 10V

Collector Emitter Breakdown Voltage 12V

Gain 11.5dB

Current - Collector (Ic) (Max) 100mA

Frequency - Transition 7GHz

Noise Figure (dB Typ @ f) 1.1dB @ 1GHz

Compliance

RoHS Status RoHS Compliant

Alternative Model

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