NE85633-A

CEL

RoHS

Package TO-236-3, SC-59, SOT-23-3

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF

Description Transistors RF Bipolar Small Signal NPN High Frequency

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Technical Details

Physical

Package / Case TO-236-3, SC-59, SOT-23-3

Surface Mount YES

Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ

Packaging Strip

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

ECCN Code EAR99

HTS Code 8541.21.00.75

Max Power Dissipation 200mW

Terminal Position DUAL

Terminal Form GULL WING

Pin Count 3

JESD-30 Code R-PDSO-G3

Qualification Status Not Qualified

Number of Elements 1

Element Configuration Single

Power Dissipation 200mW

Transistor Application AMPLIFIER

Polarity/Channel Type NPN

Transistor Type NPN

Max Collector Current 100mA

DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA 10V

Collector Emitter Breakdown Voltage 12V

Gain 11.5dB

Transition Frequency 7000MHz

Frequency - Transition 7GHz

Continuous Collector Current 100mA

Highest Frequency Band ULTRA HIGH FREQUENCY B

Collector-Base Capacitance-Max 1pF

Noise Figure (dB Typ @ f) 1.1dB @ 1GHz

Compliance

RoHS Status RoHS Compliant

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