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TAN350

Microsemi Corporation
RoHS
/
Package 55ST
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description Trans GP BJT NPN 65V 40A 3-Pin Case 55ST-1
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Technical Details

Supply Chain

Factory Lead Time 22 Weeks

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case 55ST
Number of Pins 55
Transistor Element Material SILICON

Technical

Operating Temperature 230°C TJ
Packaging Bulk
Published 2005
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Subcategory Other Transistors
Max Power Dissipation 1.45kW
Terminal Position DUAL
Terminal Form FLAT
Pin Count 2
JESD-30 Code R-CDFM-F2
Number of Elements 1
Configuration SINGLE
Power - Max 1450W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 40A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 1A 5V
Collector Emitter Breakdown Voltage 65V
Gain 7dB ~ 7.5dB
Max Frequency 1.215GHz
Frequency - Transition 960MHz~1.215GHz
Highest Frequency Band L B

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Alternative Model

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