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Package M220
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description RF TRANS 65V 1.15GHZ M220
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Technical Details

Physical

Mounting Type Chassis Mount
Package / Case M220
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature 200°C
Packaging Bulk
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish TIN LEAD
Additional Feature HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
Subcategory Other Transistors
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code O-PDFM-F2
Qualification Status Not Qualified
Number of Elements 1
Configuration Single
Case Connection BASE
Power - Max 220W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 500mA 5V
Gain 8.4dB
Voltage - Collector Emitter Breakdown (Max) 65V
Current - Collector (Ic) (Max) 5.52A
Transition Frequency 1025MHz
Frequency - Transition 1.025GHz~1.15GHz
Power Dissipation-Max (Abs) 220W
Highest Frequency Band L B

Compliance

RoHS Status Non-RoHS Compliant
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