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Transistors - Bipolar (BJT) - RF
SD1400-03

SD1400-03

Microsemi Corporation

RoHS

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Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF

Description RF POWER TRANSISTOR

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Technical Details

Physical

Surface Mount YES

Transistor Element Material SILICON

Technical

JESD-609 Code e0

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

ECCN Code EAR99

Terminal Finish TIN LEAD

Terminal Position DUAL

Terminal Form FLAT

Reach Compliance Code compliant

JESD-30 Code R-PDFM-F3

Qualification Status Not Qualified

Number of Elements 1

Configuration SINGLE

Transistor Application AMPLIFIER

Polarity/Channel Type NPN

Transition Frequency 960MHz

Collector Current-Max (IC) 2A

Collector-Emitter Voltage-Max 28V

Highest Frequency Band ULTRA HIGH FREQUENCY B

Collector-Base Capacitance-Max 18pF

Alternative Model

Toshiba Semiconductor and Storage

Rochester Electronics, LLC

Comchip Technology

Diodes Incorporated

Microsemi Corporation

Vishay Semiconductor Diodes Division

Nexperia USA Inc.

Diodes Incorporated

ON Semiconductor

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