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BFG 196 E6327

Infineon Technologies
RoHS
/
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description RF TRANS NPN 12V 7.5GHZ SOT223-4
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 800mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA 8V
Gain 9dB ~ 14.5dB
Voltage - Collector Emitter Breakdown (Max) 12V
Current - Collector (Ic) (Max) 150mA
Transition Frequency 7500MHz
Frequency - Transition 7.5GHz
Power Dissipation-Max (Abs) 0.8W
Highest Frequency Band L B
Collector-Base Capacitance-Max 1.4pF
Noise Figure (dB Typ @ f) 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz

Compliance

RoHS Status Non-RoHS Compliant

Alternative Model

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