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MRF581G

Microsemi Corporation
RoHS
/
Package Micro-X ceramic (84C)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description RF TRANS NPN 18V 5GHZ MICRO X
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case Micro-X ceramic (84C)
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Bulk
Published 2008
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature LOW NOISE
Subcategory Other Transistors
Max Power Dissipation 1.25W
Terminal Position RADIAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MRF581
Pin Count 4
JESD-30 Code O-PRDB-F4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA 5V
Collector Emitter Breakdown Voltage 18V
Gain 13dB ~ 15.5dB
Current - Collector (Ic) (Max) 200mA
Transition Frequency 5000MHz
Frequency - Transition 5GHz
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 3pF
Noise Figure (dB Typ @ f) 3dB ~ 3.5dB @ 500MHz

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Alternative Model

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