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MRF5812GR1

Microsemi Corporation
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description TRANS NPN 15V 200MA 8-SOIC
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Technical Details

Supply Chain

Lifecycle Status OBSOLETE (Last Updated: 2 weeks ago)

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory Other Transistors
Max Power Dissipation 1.25W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MRF5812
Pin Count 8
Number of Elements 1
Configuration SINGLE
Power - Max 1.25W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA 5V
Collector Emitter Breakdown Voltage 15V
Gain 13dB ~ 15.5dB
Transition Frequency 5000MHz
Max Breakdown Voltage 15V
Frequency - Transition 5GHz
Collector Base Voltage (VCBO) 30V
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 2pF
Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 500MHz

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