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NESG250134-T1-AZ

CEL
RoHS
/
Package TO-243AA
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description RF Bipolar Transistors NPN Med Power Amp
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Inventory: 6134
Minimum: 1
Total Price: USD $0.6
Unit Price: USD $0.600495
≥1 USD $0.600495
≥10 USD $0.492765
≥100 USD $0.476805
≥500 USD $0.461843
≥1000 USD $0.445883

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Supplier Device Package 3-PowerMiniMold

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Packaging Cut Tape (CT)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 1.5W
Frequency 900MHz
Base Part Number NESG2501
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 1.8W
Output Power 800mW
Power - Max 1.5W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 9.2V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 100mA 3V
Collector Emitter Breakdown Voltage 9.2V
Gain 23dB
Voltage - Collector Emitter Breakdown (Max) 9.2V
Current - Collector (Ic) (Max) 500mA
Max Frequency 10GHz
Max Breakdown Voltage 9.2V
Frequency - Transition 10GHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 2.8V
hFE Min 80
Continuous Collector Current 500mA

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