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NE856M02-T1-AZ

CEL
RoHS
/
Package TO-243AA
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description RF TRANSISTOR NPN SOT-89
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 1.2W
Frequency 6.5GHz
Base Part Number NE856
Number of Elements 1
Element Configuration Single
Power Dissipation 1.2W
Output Power 1.2W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA 10V
Collector Emitter Breakdown Voltage 12V
Gain 12dB
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
hFE Min 250
Continuous Collector Current 100mA
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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