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MS2441

Microsemi Corporation
RoHS
/
Package M112
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description Trans GP BJT NPN 65V 22A 4-Pin Case M112
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Technical Details

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case M112
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature 200°C TJ
Packaging Bulk
Published 2004
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Subcategory Other Transistors
Max Power Dissipation 1.458kW
Terminal Position DUAL
Terminal Form FLAT
Pin Count 2
JESD-30 Code R-CDFM-F2
Number of Elements 1
Configuration SINGLE
Case Connection BASE
Output Power 400W
Power - Max 1458W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 22A
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 250mA 5V
Collector Emitter Breakdown Voltage 65V
Gain 6.5dB
Max Frequency 1.15GHz
Frequency - Transition 1.025GHz~1.15GHz
Collector Base Voltage (VCBO) 65V
Highest Frequency Band L B

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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