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MS1003

Microsemi Corporation
RoHS
/
Package M111
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description RF TRANS NPN 18V 175MHZ M111
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks
Lifecycle Status OBSOLETE (Last Updated: 1 month ago)

Physical

Mount Surface Mount, Through Hole
Mounting Type Surface Mount
Package / Case M111
Transistor Element Material SILICON

Technical

Operating Temperature 200°C TJ
Packaging Bulk
Published 2004
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish TIN LEAD
Additional Feature WITH EMITTER BALLASTED RESISTORS
Max Power Dissipation 270W
Terminal Position UNSPECIFIED
Terminal Form FLAT
Pin Count 3
JESD-30 Code O-PXFM-F6
Number of Elements 1
Element Configuration Common Cathode
Power - Max 270W
Forward Current 10A
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Max Collector Current 20A
Peak Reverse Current 250μA
Max Repetitive Reverse Voltage (Vrrm) 30V
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 5A 5V
Collector Emitter Breakdown Voltage 18V
Gain 6dB
Peak Non-Repetitive Surge Current 225A
Frequency - Transition 136MHz~175MHz
Highest Frequency Band VERY HIGH FREQUENCY B
Collector-Base Capacitance-Max 390pF

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Alternative Model

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