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MDS800
Microsemi CorporationRoHS
/
Package 55ST-1
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Trans GP BJT NPN 65V 60A 3-Pin Case 55ST-1
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Technical Details
Physical
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case 55ST-1
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 200°C TJ
Packaging Bulk
Published 2012
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Power Dissipation 1.458kW
Terminal Position DUAL
Terminal Form FLAT
Pin Count 2
JESD-30 Code R-CDFM-F2
Number of Elements 1
Configuration SINGLE
Power - Max 1458W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 60A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A 5V
Collector Emitter Breakdown Voltage 65V
Gain 8.6dB
Max Frequency 1.09GHz
Frequency - Transition 1.09GHz
Highest Frequency Band L B
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Alternative Model
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