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MS1004

Microsemi Corporation
RoHS
/
Package M177
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description TRANS RF BIPO 270W 20A TO-220AC
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Technical Details

Supply Chain

Lifecycle Status OBSOLETE (Last Updated: 1 month ago)

Physical

Mount Chassis Mount, Through Hole
Mounting Type Chassis Mount
Package / Case M177
Transistor Element Material SILICON

Technical

Operating Temperature 200°C TJ
Packaging Bulk
Published 2003
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish TIN LEAD
Additional Feature HIGH RELIABILITY
Max Power Dissipation 330W
Terminal Position RADIAL
Terminal Form FLAT
Pin Count 3
JESD-30 Code O-PRFM-F4
Number of Elements 1
Element Configuration Common Cathode
Power - Max 330W
Forward Current 10A
Polarity/Channel Type NPN
Transistor Type NPN
Max Collector Current 40A
Peak Reverse Current 250μA
Max Repetitive Reverse Voltage (Vrrm) 40V
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 10A 6V
Collector Emitter Breakdown Voltage 55V
Gain 14.5dB
Peak Non-Repetitive Surge Current 225A
Frequency - Transition 30MHz
Highest Frequency Band VERY HIGH FREQUENCY B
Collector-Base Capacitance-Max 360pF

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Alternative Model

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