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MS652S

Microsemi Corporation
RoHS
/
Package M123
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description RF TRANS NPN 16V 512MHZ M123
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Technical Details

Supply Chain

Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)

Physical

Mount Chassis Mount, Surface Mount
Mounting Type Chassis Mount
Package / Case M123
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature 200°C TJ
Packaging Bulk
Published 2003
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish TIN LEAD
Subcategory Other Transistors
Max Power Dissipation 25W
Terminal Position RADIAL
Terminal Form FLAT
Pin Count 4
Number of Elements 1
Configuration SINGLE
Power - Max 25W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 16V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 200mA 5V
Collector Emitter Breakdown Voltage 16V
Gain 10dB
Frequency - Transition 450MHz~512MHz
Collector Base Voltage (VCBO) 36V
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 15pF

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Alternative Model

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