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Package M216
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description RF TRANS NPN 65V 1.15GHZ M216
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case M216
Transistor Element Material SILICON

Technical

Operating Temperature 250°C TJ
Packaging Bulk
Published 2004
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Power Dissipation 1kW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code R-CDFM-F2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection BASE
Power - Max 1000W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Max Collector Current 28A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A 5V
Collector Emitter Breakdown Voltage 65V
Gain 6.5dB
Current - Collector (Ic) (Max) 28A
Frequency - Transition 1.025GHz~1.15GHz
Highest Frequency Band L B

Compliance

RoHS Status RoHS Compliant
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