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S200-50

Microsemi Corporation
RoHS
/
Package 55HX
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description Trans GP BJT NPN 110V 30A 3-Pin Case 55HX-2
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Technical Details

Supply Chain

Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case 55HX
Number of Pins 55
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Bulk
Published 2004
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish TIN LEAD
Subcategory BIP RF Small Signal
Max Power Dissipation 320W
Terminal Position RADIAL
Terminal Form FLAT
Pin Count 4
JESD-30 Code O-CRFM-F4
Number of Elements 1
Configuration SINGLE
Case Connection EMITTER
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 110V
Max Collector Current 30A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 1A 5V
Collector Emitter Breakdown Voltage 110V
Gain 12dB ~ 14.5dB
Max Frequency 30MHz
Frequency - Transition 1.5MHz~30MHz
Highest Frequency Band HIGH FREQUENCY B

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Alternative Model

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