MS1008

Microsemi Corporation

RoHS

Package M164

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF

Description Diode Schottky 80V 10A 2-Pin(2+Tab) TO-220AC

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Technical Details

Physical

Mounting Type Chassis Mount

Package / Case M164

Surface Mount NO

Transistor Element Material SILICON

Technical

Operating Temperature 200°C TJ

Packaging Bulk

Published 2003

JESD-609 Code e0

Pbfree Code no

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 4

ECCN Code EAR99

Terminal Finish TIN LEAD

Additional Feature WITH EMITTER BALLASTING RESISTORS

Terminal Position RADIAL

Terminal Form FLAT

Peak Reflow Temperature (Cel) NOT SPECIFIED

Reach Compliance Code compliant

Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Pin Count 4

JESD-30 Code O-PRPM-F4

Qualification Status Not Qualified

Number of Elements 1

Configuration SINGLE

Power - Max 233W

Transistor Application AMPLIFIER

Polarity/Channel Type NPN

Transistor Type NPN

DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1.4A 6V

Gain 14dB

Voltage - Collector Emitter Breakdown (Max) 55V

Current - Collector (Ic) (Max) 10A

Frequency - Transition 30MHz

Highest Frequency Band VERY HIGH FREQUENCY B

Collector-Base Capacitance-Max 220pF

Compliance

RoHS Status Non-RoHS Compliant

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