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Package 55LV
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description TRANS RF BIPO 10W 600MA 55LV1
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Technical Details

Supply Chain

Lifecycle Status OBSOLETE (Last Updated: 1 month ago)

Physical

Contact Plating Tin
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case 55LV
Number of Pins 55
Transistor Element Material SILICON

Technical

Operating Temperature 200°C TJ
Packaging Bulk
Published 1997
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Max Power Dissipation 10W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code R-CDFM-F2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Output Power 3.5W
Power - Max 10W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 200mA 5V
Collector Emitter Breakdown Voltage 40V
Gain 8.5dB
Frequency - Transition 2.2GHz~2.5GHz
Highest Frequency Band S B
Min Breakdown Voltage 40V

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free
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