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MS1337

Microsemi Corporation
RoHS
/
Package M113
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description RF TRANS NPN 18V 175MHZ M113
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Technical Details

Supply Chain

Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case M113
Number of Pins 4
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Operating Temperature 200°C TJ
Packaging Bulk
Published 2002
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish TIN LEAD
Additional Feature WITH EMITTER BALLASTING RESISTORS
Max Power Dissipation 70W
Terminal Position RADIAL
Terminal Form FLAT
Pin Count 4
Number of Elements 1
Configuration SINGLE
Power - Max 70W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 18V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 250mA 5V
Collector Emitter Breakdown Voltage 18V
Gain 10dB
Frequency - Transition 175MHz
Collector Base Voltage (VCBO) 36V
Highest Frequency Band VERY HIGH FREQUENCY B
Collector-Base Capacitance-Max 120pF

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