MS1227

Microsemi Corporation

RoHS

Package M113

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF

Description Trans GP BJT NPN 18V 4.5A 4-Pin Style M113

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Inventory: 5803

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Technical Details

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Lifecycle Status IN PRODUCTION (Last Updated: 2 weeks ago)

Physical

Mount Chassis Mount, Screw

Mounting Type Chassis Mount

Package / Case M113

Number of Pins 4

Transistor Element Material SILICON

Technical

Operating Temperature 200°C TJ

Packaging Bulk

JESD-609 Code e0

Pbfree Code no

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 4

ECCN Code EAR99

Terminal Finish TIN LEAD

Additional Feature WITH EMITTER BALLASTING RESISTORS

Max Power Dissipation 80W

Terminal Position RADIAL

Terminal Form FLAT

Pin Count 4

Number of Elements 1

Configuration SINGLE

Output Power 20W

Polarity/Channel Type NPN

Transistor Type NPN

Collector Emitter Voltage (VCEO) 18V

Max Collector Current 4.5A

DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A 5V

Collector Emitter Breakdown Voltage 18V

Gain 15dB

Max Frequency 30MHz

Frequency - Transition 30MHz

Collector Base Voltage (VCBO) 36V

Highest Frequency Band HIGH FREQUENCY B

Collector-Base Capacitance-Max 135pF

Compliance

Radiation Hardening No

RoHS Status RoHS Compliant

Lead Free Lead Free

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